Effects of edge chemistry doping on graphene nanoribbon mobility

Details Effects of edge chemistry doping on graphene nanoribbon mobility Effects of edge chemistry doping on graphene nanoribbon mobility

2011-07-24

arxiv.org/abs/1107.4756v1

Surface Science 605 (2011), pp. 1643-1648

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

15 pages, 7 figures

Scientific paper

10.1016/j.susc.2010.10.030

Doping of semiconductor is necessary for various device applications. Exploiting chemistry at its reactive edges was shown to be an effective way to dope an atomically thin graphene nanoribbon (GNR) for realizing new devices in recent experiments. The carrier mobility limited by edge doping is studied as a function of the GNR width, doping density, and carrier density by using ab initio density functional and parameterized tight binding simulations combined with the non-equilibrium Green's function formalism for quantum transport. The results indicate that for GNRs wider than about 4nm, the mobility scales approximately linearly with the GNR width, inversely proportional to the edge doping concentration and decreases for an increasing carrier density. For narrower GNRs, dependence of the mobility on the GNR width and carrier density can be qualitatively different.

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