Effects of a parallel magnetic field on the novel metallic behavior in two dimensions

Details Effects of a parallel magnetic field on the novel metallic behavior in two dimensions Effects of a parallel magnetic field on the novel metallic behavior in two dimensions

2000-12-05

arxiv.org/abs/cond-mat/0012063v1

Physics

Condensed Matter

Strongly Correlated Electrons

2 pages, 3 figures; to be publ. in the Proceedings of the 25th Int. Conf. on the Physics of Semiconductors (Osaka, Sept. 2000)

Scientific paper

Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as \sigma (n_s,T,B=0)=\sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zero value as temperature T->0. Very near the B=0 metal-insulator transition, there is a large initial drop in \sigma with increasing B, followed by a much weaker \sigma (B). At higher n_s, the initial drop of MC is less pronounced.

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