Effective temperature for hopping transport in a Gaussian DOS

Details Effective temperature for hopping transport in a Gaussian DOS Effective temperature for hopping transport in a Gaussian DOS

2008-04-16

arxiv.org/abs/0804.2540v1

Phys. Rev. B 77, 195211 (2008)

Physics

Condensed Matter

Disordered Systems and Neural Networks

7 pages, 8 figures

Scientific paper

10.1103/PhysRevB.77.195211

For hopping transport in disordered materials, the mobility of charge carriers is strongly dependent on temperature and the electric field. Our numerical study shows that both the energy distribution and the mobility of charge carriers in systems with a Gaussian density of states, such as organic disordered semiconductors, can be described by a single parameter - effective temperature, dependent on the magnitude of the electric field. Furthermore, this effective temperature does not depend on the concentration of charge carriers, while the mobility does depend on the charge carrier concentration. The concept of the effective temperature is shown to be valid for systems with and without space-energy correlations in the distribution of localized states.

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