Effective-mass model of surface scattering in locally oxidized Si nanowires

Details Effective-mass model of surface scattering in locally oxidized Si nanowires Effective-mass model of surface scattering in locally oxidized Si nanowires

2010-02-02

arxiv.org/abs/1002.0435v1

Physics

Condensed Matter

Materials Science

presented at the 10th International Conference on Ultimate Integration of Silicon, 2009 (ULIS 2009)

Scientific paper

10.1109/ULIS.2009.4897584

We present a simple model to describe the lowest-subbands surface scattering in locally oxidized silicon nanowires grown in the [110] direction. To this end, we employ an atomistically scaled effective mass model projected from a three-dimensional effective mass equation and apply a quantum transport formalism to calculate the conductance for typical potential profiles. Comparison of our results with hole-transport calculations using atomistic models in conjunction with density functional theory (DFT) points to an intra-subband scattering mechanism from a potential well.

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