Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs

Details Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs

2005-12-29

arxiv.org/abs/cond-mat/0512692v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3.3 pages, 3 figures

Scientific paper

10.1103/PhysRevB.74.033309

We report on the static magnetic field dependence of the random telegraph signal (RTS) in a submicrometer silicon n-metal-oxide-semiconductor field-effect transistor. Using intense magnetic fields and $^{3}$He temperatures, we find that the characteristic time ratio changes by 3 orders of magnitude when the field increases from 0 to 12 T. Similar behaviour is found when the static field is either in-plane or perpendicular to the two dimensional electron gas. The experimental data can be explained by considering a model which includes the triplet state of the trapping center and the polarization of the channel electron gas.

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