Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Details Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

2009-11-20

arxiv.org/abs/0911.4140v1

Physics

Condensed Matter

Materials Science

40 pages, 14 figures, 2 tables. Submitted to Journal of Applied Physics in November 2009

Scientific paper

We present a detailed x-ray diffraction study of the strain in InAs/GaSb superlattices grown by molecular beam epitaxy. The superlattices were grown with either InSb or GaAs interfaces. We show that the superlattice morphology, either planar or nanostructured, is dependent on the chemical bonds at the heterointerfaces. In both cases, the misfit strain has been determined for the superlattice layers and the interfaces. We also determined how the magnitude and sign of this strain is crucial in governing the morphology of the superlattice. Our analysis suggests that the growth of self-assembled nanostructures may be extended to many systems generally thought to have too small a lattice mismatch.

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