Effect of strain on surface diffusion in semiconductor heteroepitaxy

Details Effect of strain on surface diffusion in semiconductor heteroepitaxy Effect of strain on surface diffusion in semiconductor heteroepitaxy

2001-05-21

arxiv.org/abs/cond-mat/0105397v1

Physics

Condensed Matter

Materials Science

10 pages, 8 figures, LaTeX2e, to appear in Phys. Rev. B (2001). Other related publications can be found at http://www.rz-ber

Scientific paper

10.1103/PhysRevB.64.085401

We present a first-principles analysis of the strain renormalization of the cation diffusivity on the GaAs(001) surface. For the example of In/GaAs(001)-c(4x4) it is shown that the binding of In is increased when the substrate lattice is expanded. The diffusion barrier \Delta E(e) has a non-monotonic strain dependence with a maximum at compressive strain values (e < 0), while being a decreasing function for any tensile strain (e > 0) studied. We discuss the consequences of spatial variations of both the binding energy and the diffusion barrier of an adatom caused by the strain field around a heteroepitaxial island. For a simplified geometry, we evaluate the speed of growth of two coherently strained islands on the GaAs(001) surface and identify a growth regime where island sizes tend to equalize during growth due to the strain dependence of surface diffusion.

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