Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

Details Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts Effect of spin relaxation rate on the interfacial spin depolarization in ferromagnet/oxide/semiconductor contacts

2011-10-27

arxiv.org/abs/1110.5978v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

23 pages, 6 figures

Scientific paper

Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently.

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