Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

Details Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene Effect of Spatial Charge Inhomogeneity on 1/f Noise Behavior in Graphene

2010-08-04

arxiv.org/abs/1008.0791v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

28 pages, 3 figures + 3 supplement figures

Scientific paper

10.1021/nl100985z

Scattering mechanisms in graphene are critical to understanding the limits of signal-to-noise-ratios of unsuspended graphene devices. Here we present the four-probe low frequency noise (1/f) characteristics in back-gated single layer graphene (SLG) and bilayer graphene (BLG) samples. Contrary to the expected noise increase with the resistance, the noise for SLG decreases near the Dirac point, possibly due to the effects of the spatial charge inhomogeneity. For BLG, a similar noise reduction near the Dirac point is observed, but with a different gate dependence of its noise behavior. Some possible reasons for the different noise behavior between SLG and BLG are discussed.

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