Effect of shallow traps on polaron transport at the surface of organic semiconductors

Details Effect of shallow traps on polaron transport at the surface of organic semiconductors Effect of shallow traps on polaron transport at the surface of organic semiconductors

2006-10-30

arxiv.org/abs/cond-mat/0610851v1

Physics

Condensed Matter

Materials Science

Scientific paper

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed to estimate the average polaron trapping time, tau_tr = 50 +- 10 ps, and the density of shallow traps, N_0 = (3 +- 0.5)*10^11 cm^-2, in the channel of single-crystal tetracene devices.

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