Effect of Piezoelectric Polarization on Phonon Relaxation Rates in Binary Wurtzite Nitrides

Details Effect of Piezoelectric Polarization on Phonon Relaxation Rates in Binary Wurtzite Nitrides Effect of Piezoelectric Polarization on Phonon Relaxation Rates in Binary Wurtzite Nitrides

2011-09-05

arxiv.org/abs/1109.0870v1

Physics

Condensed Matter

Materials Science

3 figures, submitted to solid state communications

Scientific paper

The piezoelectric (PZ) polarization effect enhances the phonon group velocity in wurtzite nitrides. This enhancement influences the phonon relaxation rates. We calculate the modified phonon relaxation rates in binary wurtzite nitrides (GaN, AlN and InN) by considering process like umklapp process, point defect, dislocation, boundary and phonon-electron scattering. The result will be useful to study the effect of PZ polarization on thermal conductivity of binary wurtzite nitrides (GaN, AlN and InN).

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