Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Details Effect of Native Defects on Optical Properties of InxGa1-xN Alloys Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

2005-08-05

arxiv.org/abs/cond-mat/0508140v1

Physics

Condensed Matter

Materials Science

Scientific paper

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model.

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