Physics – Condensed Matter – Materials Science
Scientific paper
2005-08-16
Physics
Condensed Matter
Materials Science
4pages, 4figures, 1table, To appear in Physica E
Scientific paper
10.1016/j.physe.2005.12.085
We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs thickness and doping density grown on identical p-AlGaAs/p-GaAs/n-AlGaAs light emitting diode (LED) structures. Electroluminescence (EL) polarization of the surface emission was measured under the Faraday configuration with external magnetic field. All samples have the bias dependence of the EL polarization, and higher EL polarization is obtained in samples in which n+-GaAs is completely depleted at zero bias. The EL polarization is found to be sensitive to the bias condition for both the (Ga,Mn)As/n+-GaAs tunnel junction and the LED structure.
Kohda Makoto
Matsukura Fumihiro
Ohno Hideo
Ohno Yuzo
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