Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions

Details Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions

2005-05-13

arxiv.org/abs/cond-mat/0505348v1

Phys. Rev. B 72, 140404(R) (2005)

Physics

Condensed Matter

Materials Science

4 pages, 3 eps figures (2 in color), revtex4

Scientific paper

10.1103/PhysRevB.72.140404

The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a significant contribution to the tunneling conductance for the antiparallel magnetization, whereas these bands are, in practice, mismatched by disorder and/or small applied bias for the parallel magnetization. This explains the experimentally observed decrease in tunneling magnetoresistance (TMR) for thin MgO barriers. We predict that a monolayer of Ag epitaxially deposited at the interface between Fe and MgO suppresses tunneling through the interface band and may thus be used to enhance the TMR for thin barriers.

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