Effect of FET geometry on charge ordering of transition metal oxides

Details Effect of FET geometry on charge ordering of transition metal oxides Effect of FET geometry on charge ordering of transition metal oxides

2002-11-27

arxiv.org/abs/cond-mat/0211611v1

Phys. Rev. B 68, 033101 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 postscript figures

Scientific paper

10.1103/PhysRevB.68.033101

We examine the effect of an FET geometry on the charge ordering phase diagram of transition metal oxides using numerical simulations of a semiclassical model including long-range Coulomb fields, resulting in nanoscale pattern formation. We find that the phase diagram is unchanged for insulating layers thicker than approximately twice the magnetic correlation length. For very thin insulating layers, the onset of a charge clump phase is shifted to lower values of the strength of the magnetic dipolar interaction, and intermediate diagonal stripe and geometric phases can be suppressed. Our results indicate that, for sufficiently thick insulating layers, charge injection in an FET geometry can be used to experimentally probe the intrinsic charge ordering phases in these materials.

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