Effect of electrical bias on spin transport across a magnetic domain wall

Details Effect of electrical bias on spin transport across a magnetic domain wall Effect of electrical bias on spin transport across a magnetic domain wall

2004-06-15

arxiv.org/abs/cond-mat/0406339v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 3 figures

Scientific paper

10.1063/1.1815044

We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.

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