Effect of edge roughness in graphene nanoribbon transistors

Details Effect of edge roughness in graphene nanoribbon transistors Effect of edge roughness in graphene nanoribbon transistors

2007-12-23

arxiv.org/abs/0712.3928v1

Appl. Phys. Lett. 91, 073103 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.2769764

The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal leakage current increases due to the localized states induced in the band gap, and the on-current decreases due to smaller quantum transmission and the self-consistent electrostatic effect in general. Although the ratio between the on-current and minimal leakage current decreases, the transistor still switches even in the presence of edge roughness. The variation between devices, however, can be large, especially for a short channel length.

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