Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation

Details Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation

2003-10-30

arxiv.org/abs/cond-mat/0310718v2

IEEE Trans. Electron Devices 51 (5), 749-756 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

31 pages, 13 figures, revised version: discussions and references added, to be published in IEEE Trans. Electron. Devices

Scientific paper

10.1109/TED.2004.826844

This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of electron-ion interaction suitable for the case of discrete impurities has been implemented in a 3D particle Monte Carlo simulator. This transport model is applied to the investigation of 50 nm MOSFET operation. The results show that a small change in the number of doping impurities or in the position of a single discrete impurity in the inversion layer may significantly influence the drain current. This effect is not only related to threshold voltage fluctuations but also to variations in transport properties in the inversion layer, especially at high drain voltage. The results are analyzed in terms of local fluctuations of electron velocity and current density. In a set of fifteen simulated devices the drive current Ion, determined at VGS = VDS = 0.6 V, is found to vary in a range of 23% according to the position of channel impurities.

Affiliated with

Also associated with

No associations

Rating

Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-250390