Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films

Details Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films

2005-03-31

arxiv.org/abs/cond-mat/0503761v1

Physics

Condensed Matter

Superconductivity

15 pages including one table and three figures; Submitted to Applied Physics Letters

Scientific paper

10.1063/1.2012524

The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2(0) depends roughly linearly on Tc, while the anisotropy of Hc2(0) decreases as Tc decreases. Annealing the films reproduces the Tc vs. residual resistivity dependence but not the Hc2(0) values induced by damage.

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