Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks

Details Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks Effect of Cu impurities on wet etching of Si(110): formation of trapezoidal hillocks

Jan 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008njph...10a3033h&link_type=abstract

New Journal of Physics, Volume 10, Issue 1, pp. 013033 (2008).

Physics

4

Scientific paper

We simulate the formation of experimentally observed trapezoidal hillocks on etched Si(110) surfaces, describing their generic geometrical shape and analyzing the relative stability and/or reactivity of the key surface sites. In our model, the hillocks are stabilized by Cu impurities in the etchant adsorbing on the surface and acting as pinning agents. A model of random adsorptions will not result in hillock formation since a single impurity is easily removed from the surface. Instead a whole cluster of Cu atoms is needed as a mask to stabilize a hillock. Therefore we propose and analyze mechanisms that drive correlated adsorptions and lead to stable Cu clusters.

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