Effect of Chemical Doping on the Thermoelectric Properties of FeGa3

Details Effect of Chemical Doping on the Thermoelectric Properties of FeGa3 Effect of Chemical Doping on the Thermoelectric Properties of FeGa3

2011-01-10

arxiv.org/abs/1101.1949v2

Physics

Condensed Matter

Materials Science

5 pages, 4 figures, To be appear in Journal of Applied Physics

Scientific paper

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n-type Seebeck coefficient (S ~ -400 \mu V/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (~ -150 \mu V/K). The largest power factor (S2/{\rho} = 62 \mu W/m K2) and corresponding figure of merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.

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