Effect of charged impurities on graphene thermoelectric power near the Dirac point

Details Effect of charged impurities on graphene thermoelectric power near the Dirac point Effect of charged impurities on graphene thermoelectric power near the Dirac point

2011-01-24

arxiv.org/abs/1101.4676v1

Physics

Condensed Matter

Materials Science

Scientific paper

In graphene devices with a varying degree of disorders as characterized by their carrier mobility and minimum conductivity, we have studied the thermoelectric power along with the electrical conductivity over a wide range of temperatures. We have found that the Mott relation fails in the vicinity of the Dirac point in high-mobility graphene. By properly taking account of the high temperature effects, we have obtained good agreement between the Boltzmann transport theory and our experimental data. In low-mobility graphene where the charged impurities induce relatively high residual carrier density, the Mott relation holds at all gate voltages.

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