Effect of bulk inversion asymmetry on the Datta-Das transistor

Details Effect of bulk inversion asymmetry on the Datta-Das transistor Effect of bulk inversion asymmetry on the Datta-Das transistor

2003-04-14

arxiv.org/abs/cond-mat/0304318v1

Phys. Rev. B68, 081201(R) (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, Revtex4, 4 EPS figures

Scientific paper

10.1103/PhysRevB.68.081201

A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.

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