Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

Details Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films

2002-12-17

arxiv.org/abs/cond-mat/0212399v1

Appl. Phys. Lett. 82, 2287 (2003)

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

10.1063/1.1566097

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer thickness, indicating that the (Ga,Mn)As - GaAs interface has importance for the physical properties of the (Ga,Mn)As layer. The magnetoresistance shows additional features when compared to thick (Ga,Mn)As layers, that are at present of unknown origin.

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