Edge States of Monolayer and Bilayer Graphene Nanoribbons

Details Edge States of Monolayer and Bilayer Graphene Nanoribbons Edge States of Monolayer and Bilayer Graphene Nanoribbons

2010-01-23

arxiv.org/abs/1001.4168v3

Journal of the Physical Society of Japan 81, 024704 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 6 figures

Scientific paper

10.1143/JPSJ.81.024704

On the basis of tight-binding lattice model, the edge states of monolayer and bilayer graphene nanoribbons (GNRs) with different edge terminations are studied. The effects of edge-hopping modulation, spin-orbital coupling (SOC), and bias voltage on bilayer GNRs are discussed. We observe the following: (i) Some new extra edge states can be created by edge-hopping modulation for monolayer GNRs. (ii) Intralayer Rashba SOC plays a role in depressing the band energy gap $E_g$ opened by intrinsic SOC for both monolayer and bilayer GNRs. An almost linear dependent relation, i.e., $E_g\sim \lambda_R$, is found. (iii) Although the bias voltage favors a bulk energy gap for bilayer graphene without intrinsic SOC, it tends to reduce the gap induced by intrinsic SOC. (iv) The topological phase of the quantum spin Hall effect can be destroyed completely by interlayer Rashba SOC for bilayer GNRs.

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