Edge State Transport of Separately Contacted Bilayer Systems in the Fractional Quantum Hall Regime

Details Edge State Transport of Separately Contacted Bilayer Systems in the Fractional Quantum Hall Regime Edge State Transport of Separately Contacted Bilayer Systems in the Fractional Quantum Hall Regime

1999-06-14

arxiv.org/abs/cond-mat/9906191v1

Physica E 6 (2000) 632

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages with 2 eps figure, Revtex, contributed paper to EP2DS-13

Scientific paper

10.1016/S1386-9477(99)00134-4

Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the interlayer Coulomb interaction is negligibly small. It is shown that source-drain voltage dependence of the resistances reflects the Luttinger liquid parameter of the edge state.

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