Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations

Details Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations

2006-01-27

arxiv.org/abs/cond-mat/0601630v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted by Phys.Rev.B as regular article

Scientific paper

10.1103/PhysRevB.73.054436

A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven magnetization dynamics of spin-flip transistors in which the source-drain contacts are magnetized perpendicularly to the device plane by magnetoelectronic circuit theory and the macrospin Landau-Lifshitz-Gilbert equation. Spin flip scattering and spin pumping effects are taken into account. We find a steady-state rotation of the base magnetization at GHz frequencies that is tuneable by the source-drain bias. We discuss the advantages of the lateral structure for high-frequency generation and actuation of nanomechanical systems over recently proposed nanopillar structures.

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