Dynamics of the Inductive Single-Electron Transistor

Details Dynamics of the Inductive Single-Electron Transistor Dynamics of the Inductive Single-Electron Transistor

2004-06-21

arxiv.org/abs/cond-mat/0406479v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, submitted to Proceedings of the Vth Rencontres de Moriond in Mesoscopic Physics

Scientific paper

Using a classical equation of motion, dynamics of the phase is analyzed in the Inductive Single-Electron Transistor (L-SET) which is a promising new system suitable for quantum measurement with ultimate sensitivity and low back-action. In a regime of nonlinear dynamics, a shift of the oscillator resonant frequency is discovered which has a direct analogy to the switching of a dc-biased Josephson junction into voltage state. Results are reviewed for the predicted charge sensitivity, and it is shown that a performance challenging the best rf-SETs is foreseeable with the new device.

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