Dynamically controlled charge sensing of a few-electron silicon quantum dot

Details Dynamically controlled charge sensing of a few-electron silicon quantum dot Dynamically controlled charge sensing of a few-electron silicon quantum dot

2011-07-08

arxiv.org/abs/1107.1557v1

AIP Advances 1, 042111 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3654496

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.

Affiliated with

Also associated with

No associations

Rating

Dynamically controlled charge sensing of a few-electron silicon quantum dot does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Dynamically controlled charge sensing of a few-electron silicon quantum dot, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamically controlled charge sensing of a few-electron silicon quantum dot will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-221763