Dynamic Systems Model for Filamentary Mem-Resistors

Details Dynamic Systems Model for Filamentary Mem-Resistors Dynamic Systems Model for Filamentary Mem-Resistors

2011-03-24

arxiv.org/abs/1103.4663v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages

Scientific paper

A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a dynamic Schottky barrier (associated with the electron depletion width surrounding the filament-electrode gap). A general model is formulated which may be applicable to many different forms of memory resistor materials. The frequency response of the model is briefly discussed. Keywords- mem-resistor, non-linear dynamic systems, RRAM, ReRAM, Schottky junction, tunneling junction

Affiliated with

Also associated with

No associations

Rating

Dynamic Systems Model for Filamentary Mem-Resistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Dynamic Systems Model for Filamentary Mem-Resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dynamic Systems Model for Filamentary Mem-Resistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-46955