Physics – Condensed Matter – Materials Science
Scientific paper
2005-04-25
Appl. Phys. Lett. 86, 243504 (2005)
Physics
Condensed Matter
Materials Science
4 pages, 2 figures
Scientific paper
10.1063/1.1947915
We discuss the dynamic impact ionization breakdown of high voltage p-n junction which occurs when the electric field is increased above the threshold of avalanche impact ionization on a time scale smaller than the inverse thermogeneration rate. The avalanche-to-streamer transition characterized by generation of dense electron-hole plasma capable to screen the applied external electric field occurs in such regimes. We argue that the experimentally observed deterministic triggering of the plane streamer front at the electric field strength above the threshold of avalanche impact ionization but yet below the threshold of band-to-band tunneling is generally caused by field-enhanced ionization of deep-level centers. We suggest that the process-induced sulfur centers and native defects such as EL2, HB2, HB5 centers initiate the front in Si and GaAs structures, respectively. In deep-level free structures the plane streamer front is triggered by Zener band-to-band tunneling.
Grekhov Igor
Rodin Pavel
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