Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

Details Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

2010-07-29

arxiv.org/abs/1007.5190v1

Appl. Phys. Lett. 96, 264102 (2010)

Physics

Condensed Matter

Materials Science

13 pages, 3 figures, 1 table, accepted for Applied Physics Letters

Scientific paper

10.1063/1.3458783

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500~keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14~keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

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