Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

Details Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

2010-09-14

arxiv.org/abs/1009.2615v2

Physics

Condensed Matter

Materials Science

25 pages, 8 figures

Scientific paper

Growth of gallium nitride on GaN(0001) surface is modeled by Monte Carlo method. Simulated growth is conducted in N-rich conditions, hence it is controlled by Ga atoms surface diffusion. It is shown that dominating four-body interactions of Ga atoms can cause step flow anisotropy. Kinetic Monte Carlo simulations show that parallel steps with periodic boundary conditions form double terrace structures, whereas initially V -shaped parallel step train initially bends and then every second step moves forward, building regular, stationary ordering as observed during MOVPE or HVPE growth of GaN layers. These two phenomena recover surface meandered pair step pattern observed, since 1953, on many semiconductor surfaces, such as SiC, Si or GaN. Change of terrace width or step orientation particle diffusion jump barriers leads either to step meandering or surface roughening. Additionally it is shown that step behavior changes with the Schwoebel barrier height. Furthermore, simulations under conditions corresponding to very high external particle flux result in triangular islands grown at the terraces. All structures, emerging in the simulations, have their corresponding cases in the experimental results.

Affiliated with

Also associated with

No associations

Rating

Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-395740