Doping graphene with metal contacts

Details Doping graphene with metal contacts Doping graphene with metal contacts

2008-02-15

arxiv.org/abs/0802.2267v3

Phys. Rev. Lett. 101, 026803 (2008)

Physics

Condensed Matter

Materials Science

4 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.101.026803

Making devices with graphene necessarily involves making contacts with metals. We use density functional theory to study how graphene is doped by adsorption on metal substrates and find that weak bonding on Al, Ag, Cu, Au and Pt, while preserving its unique electronic structure, can still shift the Fermi level with respect to the conical point by $\sim 0.5$ eV. At equilibrium separations, the crossover from $p$-type to $n$-type doping occurs for a metal work function of $\sim 5.4$ eV, a value much larger than the graphene work function of 4.5 eV. The numerical results for the Fermi level shift in graphene are described very well by a simple analytical model which characterizes the metal solely in terms of its work function, greatly extending their applicability.

Affiliated with

Also associated with

No associations

Rating

Doping graphene with metal contacts does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Doping graphene with metal contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping graphene with metal contacts will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-38921