Doping dependent charge injection and band alignment in organic field-effect transistors

Details Doping dependent charge injection and band alignment in organic field-effect transistors Doping dependent charge injection and band alignment in organic field-effect transistors

2005-12-14

arxiv.org/abs/cond-mat/0512318v1

Phys. Rev. B 72, 235302 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.72.235302

We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum. At low impurity dopant densities, Au/P3HT contact resistances increase and become nonohmic. In contrast, Pt/P3HT contacts remain ohmic even at far lower doping. Ultraviolet photoemission spectroscopy (UPS) reveals that metal/P3HT band alignment shifts dramatically as samples are dedoped, leading to an increased injection barrier for holes, with a greater shift for Au/P3HT. These results demonstrate that doping can drastically alter band alignment and the charge injection process at metal/organic interfaces.

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