Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx

Details Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx

2008-09-06

arxiv.org/abs/0809.1133v3

Phys. Rev. B 79, 144527 (2009)

Physics

Condensed Matter

Superconductivity

15 pages, 5 figures, Accepted by PRB

Scientific paper

The electrical resistivity (Rxx) and Hall resistivity (Rxy) of LaFeAsO1-xFx have been measured over a wide fluorine doping range 0 =< x =< 0.14 using 60 T pulsed magnets. While the superconducting phase diagram (Tc, x) displays the classic dome-shaped structure, we find that the resistive upper critical field (Hc2) increases monotonically with decreasing fluorine concentration, with the largest Hc2 >= 75 T for x = 0.05. This is reminiscent of the composition dependence in high-Tc cuprates and might correlate with opening of a pseudo-gap in the underdoped region. Further, the temperature dependence of Hc2(T) for superconducting samples can be understood in terms of multi-band superconductivity. Rxy data for non-superconducting samples show non-linear field dependence, which is also consistent with a multi-carrier scenario.

Affiliated with

Also associated with

No associations

Rating

Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Doping dependence of upper critical field and Hall resistivity in LaFeAsO1-xFx will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-4983