Doping dependence of an n-type cuprate superconductor investigated by ARPES

Details Doping dependence of an n-type cuprate superconductor investigated by ARPES Doping dependence of an n-type cuprate superconductor investigated by ARPES

2002-01-08

arxiv.org/abs/cond-mat/0201119v2

Phys. Rev. Lett. 88 257001 (2002)

Physics

Condensed Matter

Strongly Correlated Electrons

Submitted Phys. Rev. Lett. - Nov. 20, 2001

Scientific paper

10.1103/PhysRevLett.88.257001

We present an angle resolved photoemission (ARPES) doping dependence study of the n-type cuprate superconductor Nd_2-xCe_xCuO_4, from the half-filled Mott-insulator to the T_c=24K superconductor. In Nd2CuO4, we reveal the charge-transfer band (CTB) for the first time. As electrons are doped into the system, this feature's intensity decreases with the concomitant formation of near-E_F spectral weight. At low doping, the Fermi surface is an electron-pocket (with volume ~ x) centered at (pi,0). Further doping leads to the creation of a new hole-like Fermi surface (volume ~ 1+x) centered at (pi,pi). These findings shed light on the Mott gap, its doping evolution, as well as the anomalous transport properties of the n-type cuprates.

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