Doped Mott insulator as the origin of heavy Fermion behavior in LiV2O4

Details Doped Mott insulator as the origin of heavy Fermion behavior in LiV2O4 Doped Mott insulator as the origin of heavy Fermion behavior in LiV2O4

2007-01-22

arxiv.org/abs/cond-mat/0701509v1

Phys. Rev. Lett. 98, 166402 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 5 figures

Scientific paper

10.1103/PhysRevLett.98.166402

We investigate the electronic structure of LiV2O4, for which heavy fermion behavior has been observed in various experiments, by the combination of the local density approximation and dynamical mean field theory. To obtain results at zero temperature, we employ the projective quantum Monte Carlo method as an impurity solver. Our results show that the strongly correlated a1g band is a lightly doped Mott insulator which -at low temperatures- shows a sharp (heavy) quasiparticle peak just above the Fermi level, which is consistent with recent photoemission experiment by Shimoyamada et al. [Phys. Rev. Lett. 96 026403 (2006)].

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