Dopant Spatial Distributions: Sample Independent Response Function And Maximum Entropy Reconstruction

Details Dopant Spatial Distributions: Sample Independent Response Function And Maximum Entropy Reconstruction Dopant Spatial Distributions: Sample Independent Response Function And Maximum Entropy Reconstruction

1997-09-29

arxiv.org/abs/cond-mat/9709313v1

Physics

Condensed Matter

Materials Science

5 two-columne pages, 3 postscript figures, to appear in Phys. Rev. B15

Scientific paper

10.1103/PhysRevB.56.15167

We demonstrate the use of maximum entropy based deconvolution to reconstruct boron spatial distribution from the secondary ion mass spectrometry (SIMS) depth profiles on a system of variously spaced boron $\delta$-layers grown in silicon. Sample independent response functions are obtained using a new method which reduces the danger of incorporating real sample behaviour in the response. Although the original profiles of different primary ion energies appear quite differently, the reconstructed distributions agree well with each other. The depth resolution in the reconstructed data is increased significantly and segregation of boron at the near surface side of the $\delta$-layers is clearly shown.

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