Dopant metrology in advanced FinFETs

Details Dopant metrology in advanced FinFETs Dopant metrology in advanced FinFETs

2011-11-17

arxiv.org/abs/1111.4238v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 3 figures

Scientific paper

Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations using the NEMO 3-D code, it is possible to identify the impurity's chemical species and determine their concentration, local electric field and depth below the Si/SiO$_{\mathrm{2}}$ interface. The ability to model the excited states rather than just the ground state is the critical component of the analysis and allows the demonstration of a new approach to atomistic impurity metrology.

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