Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment

Details Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment

2007-01-09

arxiv.org/abs/cond-mat/0701177v1

J. Phys.: Condens. Matter 19 (2007) 132201.

Physics

Condensed Matter

Materials Science

12 pages, including 3 figures

Scientific paper

10.1088/0953-8984/19/13/132201

Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes at Fujitsu with BiFeO3. However, in order to increase storage density, the industry roadmap requires by 2010 that such planar devices be replaced with three-dimensional structures. Unfortunately, little is known yet about even such basic questions as the domain scaling of 3-d nanodevices, as opposed to 2-d thin films. Here we report the experimental measurement of nano-domains in ferroelectric nanocolumns, together with a theory of domain size in 3-d structures which explains the observations.

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