Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

Details Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

2010-01-15

arxiv.org/abs/1001.2631v2

J. Magn. Magn. Mater 322,3481(2010)

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning.

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