Domain-wall resistance in ferromagnetic (Ga,Mn)As

Details Domain-wall resistance in ferromagnetic (Ga,Mn)As Domain-wall resistance in ferromagnetic (Ga,Mn)As

2006-01-20

arxiv.org/abs/cond-mat/0601464v1

Phys. Rev. Lett. 96, 096602 (2006).

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevLett.96.096602

A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is one order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced misstracing of the carrier spins subject to spatially varying magnetization.

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