Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films

Details Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films Domain wall creep in epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films

2002-03-19

arxiv.org/abs/cond-mat/0203381v1

Phys. Rev. Lett. 89, 097601 (2002)

Physics

Condensed Matter

Disordered Systems and Neural Networks

5 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.89.097601

Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism, in which initial nucleation is followed by radial domain wall motion perpendicular to the polarization direction. The electric field dependence of the domain wall velocity demonstrates that domain wall motion in ferroelectric thin films is a creep process, with the critical exponent mu close to 1. The dimensionality of the films suggests that disorder is at the origin of the observed creep behavior.

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