Domain Switching Kinetics in Disordered Ferroelectric Thin Films

Details Domain Switching Kinetics in Disordered Ferroelectric Thin Films Domain Switching Kinetics in Disordered Ferroelectric Thin Films

2007-04-09

arxiv.org/abs/0704.1053v1

Physics

Condensed Matter

Materials Science

4 pages and 4 figures

Scientific paper

10.1103/PhysRevLett.99.267602

We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O$_{3}$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of domain switching times. We viewed the switching process under an electric field as a motion of the ferroelectric domain through a random medium, and we showed that the local field variation due to dipole defects at domain pinning sites could explain the intriguing distribution.

Affiliated with

Also associated with

No associations

Rating

Domain Switching Kinetics in Disordered Ferroelectric Thin Films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Domain Switching Kinetics in Disordered Ferroelectric Thin Films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Domain Switching Kinetics in Disordered Ferroelectric Thin Films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-387034