Disproportionation Phenomena on Free and Strained Sn/Ge(111) and Sn/Si(111) Surfaces

Details Disproportionation Phenomena on Free and Strained Sn/Ge(111) and Sn/Si(111) Surfaces Disproportionation Phenomena on Free and Strained Sn/Ge(111) and Sn/Si(111) Surfaces

2002-07-09

arxiv.org/abs/cond-mat/0207229v1

Physics

Condensed Matter

Materials Science

Revtex, 5 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.89.126803

Distortions of the $\sqrt3\times\sqrt3$ Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, $Q$, related to the surface band occupancy. A novel understanding of the $(3\times3)$-1U (``1 up, 2 down'') and 2U (``2 up, 1 down'') distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distorsions. Negative strain attracts pseudocharge from the valence band causing first a $(3\times3)$-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a $(\sqrt3\times\sqrt3)$-3U (``all up'') state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.

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