Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances

Details Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances

2007-08-10

arxiv.org/abs/0708.1465v1

Dans European Nano Systems Worshop - ENS 2006, Paris : France (2006)

Physics

Condensed Matter

Materials Science

Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Scientific paper

The designs integrating the promising carbon nanotube transistors (CNTFET) will have to take into account the constraints implied by the strong dispersion inherent to nanotube manufacturing. This paper proposes to characterize the main CNTFET performances : on-current Ion, Ion/Ioff ratio and inverse sub-threshold slope S according to the dispersion on the nanotube diameter. For this purpose, we use a compact model suitable for testing several diameter values.

Affiliated with

Also associated with

No associations

Rating

Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-47083