Disordered Electrical Potential Observed on the Surface of SiO$_2$ by Electric Field Microscopy

Details Disordered Electrical Potential Observed on the Surface of SiO$_2$ by Electric Field Microscopy Disordered Electrical Potential Observed on the Surface of SiO$_2$ by Electric Field Microscopy

2009-05-18

arxiv.org/abs/0905.2941v2

Physics

Condensed Matter

Materials Science

4 pages and 4 figures

Scientific paper

The electrical potential on the surface of $\sim 300$ nm thick SiO$_2$ grown on single crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to $\sim 0.4 $V within regions of $1 \mu$m. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.

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