Disorder-induced tail states in a gapped bilayer graphene

Details Disorder-induced tail states in a gapped bilayer graphene Disorder-induced tail states in a gapped bilayer graphene

2008-07-15

arxiv.org/abs/0807.2445v1

Phys. Rev. B 78, 195409 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 4 figures

Scientific paper

10.1103/PhysRevB.78.195409

The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as $\nu(\epsilon)\propto \exp(-|\epsilon/\epsilon_t|^{3/2})$, where the characteristic tail energy, $\epsilon_t$, scales with the concentration of impurities, $n_i$, as $n_i^{2/3}$. While the bare energy spectrum is characterized by two energies: the bias-induced gap, $V$, and interlayer tunneling, $t_{\perp}$, the tail, $\epsilon_t$, contains a {\it single} combination $V^{1/3}t_{\perp}^{2/3}$. We show that the above expression for $\nu(\epsilon)$ in the tail actually applies all the way down to the mid-gap.

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