Disorder-induced microscopic magnetic memory

Details Disorder-induced microscopic magnetic memory Disorder-induced microscopic magnetic memory

2004-11-28

arxiv.org/abs/cond-mat/0411698v1

Phys. Rev. Lett. 94, 017202 (2005)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures. Accepted for publication in Physical Review Letters in Nov. 2004

Scientific paper

10.1103/PhysRevLett.94.017202

Using coherent x-ray speckle metrology, we have measured the influence of disorder on major loop return point memory (RPM) and complementary point memory (CPM) for a series of perpendicular anisotropy Co/Pt multilayer films. In the low disorder limit, the domain structures show no memory with field cycling--no RPM and no CPM. With increasing disorder, we observe the onset and the saturation of both the RPM and the CPM. These results provide the first direct ensemble-sensitive experimental study of the effects of varying disorder on microscopic magnetic memory and are compared against the predictions of existing theories.

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